 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 600 20 58 30 232 220 120 +150 -40 +150 70 Units V V A W W C C Nm * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=30mA VGE=15V IC=30A VGE=0V VCE=10V f=1MHz VCC=300V IC=30A VGE=15V RG=82 VCC=300V IC=30A VGE=+15V RG=8 IF=30A VGE=0V IF=30A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.0 Units mA A V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 0.35 3.0 300 5.5 1900 400 100 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time s s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 0.56 1.04 Units C/W Collector Current vs. Collector-Emitter Voltage 120 T j= 2 5 C 120 V GE = 2 0 V 1 5 V 100 100 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C V GE = 2 0 V [A] [A] 15V 80 12V 60 80 12V 60 C Collector Current : I 40 10V 20 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector Current : I C 40 10V 20 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] [V] CE 10 10 CE Collector-Emitter Voltage : V Collector-Emitter Voltage : V 8 8 6 6 4 IC = 2 60A 30A 15A 0 0 5 10 15 20 25 4 IC = 60A 30A 15A 2 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 3 0 0 V , R G =8.2 , V GE = 1 5 V , T j= 2 5 C 1000 1000 Switching Time vs. Collector Current V CC = 3 0 0 V , R G =8.2 , V GE= 1 5 V , T j= 1 2 5 C t off , t r, t off , t f [nsec] , t r, t off , t f [nsec] t off tf t on tf t on 100 on Switching Time : t Switching Time : t on 100 tr tr 10 0 10 20 30 40 50 10 0 10 20 30 40 50 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =300V, I C = 3 0 A , V GE = 1 5 V , T j= 2 5 C Switching Time vs. R G V CC =300V, I C = 3 0 A , V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] 1000 t on t off , t r, t off , t f [nsec] 1000 t off tf t on 100 tr tr tf 100 on Switching Time : t 10 0 100 Gate Resistance : R G [ ] Switching Time : t on 10 0 100 Gate Resistance : R G [ ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 10 500 Dynamic Input Characteristics T j= 2 5 C 25 [V] , C res , C ies [nF] CE Collector-Emitter Voltage : V 1 300 15 Capacitance : C C oes 200 10 0,1 C res 100 5 0,01 0 5 10 15 20 25 30 35 0 0 20 40 60 80 Gate Charge : 100 120 Q G [nQ] 140 0 160 Collector-Emitter Voltage : V CE [V] Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 300 / dt= 1 0 0 A / s e c 10 / dt = 1 0 0 A / s e c [nsec] [A] 250 125C 200 8 125C rr Reverse Recovery Time : t Reverse Recovery Current : I rr 6 150 25C 100 4 25C 50 2 0 0 10 20 30 40 50 0 0 10 20 30 40 50 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V oes GE [V] C ies 400 V C C =200V, 300V, 400V 20 Reverse Biased Safe Operating Area + V GE = 1 5 V , - V GE <15V, T j<125C, R G >8.2 70 500 Typical Short Circuit Capability V CC = 4 0 0 V , R G =8.2 , T j= 1 2 5 C 50 t SC I SC 40 60 400 [A] [A] 50 SC Collector Current : I 30 200 20 20 100 10 10 0 0 100 200 300 400 500 600 700 0 5 10 15 20 [V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 120 T j= 1 2 5 C 2 5 C 400 V R =200V, I F = 3 0 A , T j= 1 2 5 C -di / dt 20 [nsec] 100 300 15 [A] 60 200 10 40 100 t rr 5 20 0 0 1 2 3 4 5 6 0 0 100 200 -di 300 / dt 400 500 0 600 Forward Voltage : V F [V] [A/sec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] 10 0 FWD IGBT 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 P u l s e W i d t h : P W [sec] Reverse Recovery Current : I 80 Reverse Recovery Time : t Forward Current : I F rr rr [A] I rr Short Circuit Time : t 40 Short Circuit Current : I 300 30 SC C [s] Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com |
Price & Availability of 1MBH30D-060
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |